Fig. 5. (a) Ambipolar E-field effect in single-layer graphene. The gate voltage and temperature dependence of resistivity of the high mobility sample (μ ≈ 20,000 cm2 V-1s−1). (b) ρ versus Vg at three representative temperatures, T = 0.03K, 77K, and 300 K showing similar performances due to zero phonon scattering. Parts (a) and (b) reproduced with permission of Eur. Phys. J. Special Topics, EDP Sciences, Springer-Verlag, 148, 15 (2007). (c) Graphene chiral quantum Hall effects. Reproduced with permission of Physics Today, 60(8), 35 (2007).

Fig. 5. (a) Ambipolar E-field effect in single-layer graphene. The gate
voltage and temperature dependence of resistivity of the high mobility
sample (μ ≈ 20,000 cm2 V-1s−1). (b) ρ versus Vg at three representative
temperatures, T = 0.03K, 77K, and 300 K showing similar performances
due to zero phonon scattering. Parts (a) and (b) reproduced with permission
of Eur. Phys. J. Special Topics, EDP Sciences, Springer-Verlag, 148,
15 (2007). (c) Graphene chiral quantum Hall effects. Reproduced with
permission of Physics Today, 60(8), 35 (2007).