Fig. 6. Current gain ft, max characteristics from: (a) IBM showing cut-off frequency of 170 GHz for gate length of 90 nm.17 Reproduced by permission of IEDM Tech. Digest, 9.6.1-9.6.3, 226 (2010); (b) Samsung showing cut-off frequency of 200 GHz for gate length of 0.24 μm.18 Reproduced by permission of IEDM Tech. Digest, 23.5.1-23.5.4, 568 (2010); and (c) Intrinsic I-V characteristics of 0.44 um device fabricated using B-N as gate dielectric. Solid lines indicate model fitting curves.19 Reproduced by permission of IEDM Tech. Digest, 23.2.1-23.2.4, 556 (2010).

Fig. 6. Current gain ft, max characteristics from: (a) IBM showing cut-off frequency of 170 GHz for gate length of 90 nm.17 Reproduced by permission of
IEDM Tech. Digest, 9.6.1-9.6.3, 226 (2010); (b) Samsung showing cut-off frequency of 200 GHz for gate length of 0.24 μm.18 Reproduced by permission
of IEDM Tech. Digest, 23.5.1-23.5.4, 568 (2010); and (c) Intrinsic I-V characteristics of 0.44 um device fabricated using B-N as gate dielectric. Solid lines
indicate model fitting curves.19 Reproduced by permission of IEDM Tech. Digest, 23.2.1-23.2.4, 556 (2010).